? semiconductor components industries, llc, 2004 may, 2004 ? rev. 4 1 publication order number: 2n5460/d 2n5460, 2n5461, 2N5462 jfet amplifier p?channel ? depletion features ? pb?free packages are available* maximum ratings rating symbol value unit drain ? gate voltage v dg 40 vdc reverse gate ? source voltage v gsr 40 vdc forward gate current i g(f) 10 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c junction temperature range t j ?65 to +135 c storage channel temperature range t stg ?65 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2n54xx y = year ww = work week yww marking diagram to?92 case 29 style 7 1 2 3 preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 2 drain 1 source 3 gate
2n5460, 2n5461, 2N5462 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate ?source breakdown voltage (i g = 10 adc, v ds = 0) 2n5460, 2n5461, 2N5462 v (br)gss 40 ? ? vdc gate reverse current (v gs = 20 vdc, v ds = 0) 2n5460, 2n5461, 2N5462 (v gs = 30 vdc, v ds = 0) (v gs = 20 vdc, v ds = 0, t a = 100 c) 2n5460, 2n5461, 2N5462 (v gs = 30 vdc, v ds = 0, t a = 100 c) i gss ? ? ? ? 5.0 1.0 nadc adc gate ?source cutoff voltage 2n5460 (v ds = 15 vdc, i d = 1.0 adc) 2n5461 2N5462 v gs(off) 0.75 1.0 1.8 ? ? ? 6.0 7.5 9.0 vdc gate ?source voltage (v ds = 15 vdc, i d = 0.1 madc) 2n5460 (v ds = 15 vdc, i d = 0.2 madc) 2n5461 (v ds = 15 vdc, i d = 0.4 madc) 2N5462 v gs 0.5 0.8 1.5 ? ? ? 4.0 4.5 6.0 vdc on characteristics zero ?gate ?voltage drain current 2n5460 (v ds = 15 vdc, v gs = 0, f = 1.0 khz) 2n5461 2N5462 i dss ?1.0 ?2.0 ?4.0 ? ? ? ?5.0 ?9.0 ?16 madc small?signal characteristics forward transfer admittance 2n5460 (v ds = 15 vdc, v gs = 0, f = 1.0 khz) 2n5461 2N5462 ? y fs ? 1000 1500 2000 ? ? ? 4000 5000 6000 mhos output admittance (v ds = 15 vdc, v gs = 0, f = 1.0 khz) ? y os ? ? ? 75 mhos input capacitance (v ds = 15 vdc, v gs = 0, f = 1.0 mhz) c iss ? 5.0 7.0 pf reverse transfer capacitance (v ds = 15 vdc, v gs = 0, f = 1.0 mhz) c rss ? 1.0 2.0 pf functional characteristics equivalent short?circuit input noise voltage (v ds = 15 vdc, v gs = 0, f = 100 hz, bw = 1.0 hz) e n ? 60 115 nv hz ordering information device package shipping 2 2n5460 to?92 1000 unit / bulk 2n5460g to?92 (pb?free) 1000 unit / bulk 2n5461 to?92 1000 unit / bulk 2n5461rlra to?92 2000 tape & reel 2N5462 to?92 1000 unit / bulk 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifi- cations brochure, brd8011/d.
2n5460, 2n5461, 2N5462 http://onsemi.com 3 y fs forward transfer admittance ( mhos) y fs forward transfer admittance ( mhos) drain current versus gate source voltage forward transfer admittance versus drain current i d , drain current (ma) y fs forward transfer admittance ( mhos) 4.0 4000 0 0.2 v gs , gate-source voltage (volts) figure 1. v gs(off) = 2.0 v 1.0 i d , drain current (ma) 3.5 i d , drain current (ma) 10 10000 0 1.0 v gs , gate-source voltage (volts) figure 2. v gs(off) = 4.0 v i d , drain current (ma) i d , drain current (ma) 16 10000 0 v gs , gate-source voltage (volts) figure 3. v gs(off) = 5.0 v i d , drain current (ma) figure 4. v gs(off) = 2.0 v figure 5. v gs(off) = 4.0 v figure 6. v gs(off) = 5.0 v 3.0 2.5 2.0 1.5 1.0 0.5 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ds = 15 v 200 300 500 700 1000 2000 3000 0.2 0.3 0.5 0.7 2.0 3.0 4.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 500 700 1000 2000 3000 5000 7000 0.5 0.7 1.0 2.0 3.0 5.0 7.0 14 12 10 8.0 6.0 4.0 2.0 0 1.0 2.0 3.0 8.0 4.0 5.0 6.0 7.0 500 700 1000 2000 3000 5000 7000 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t a = -55 c 25 c 125 c v ds = 15 v f = 1.0 khz v ds = 15 v t a = -55 c 25 c 125 c v ds = 15 v t a = -55 c 25 c 125 c v ds = 15 v f = 1.0 khz v ds = 15 v f = 1.0 khz
2n5460, 2n5461, 2N5462 http://onsemi.com 4 1000 0.1 0.2 i d , drain current (ma) figure 7. output resistance versus drain current 10 0.5 1.0 2.0 5.0 10 r oss , output resistance (k ohms) c, capacitance (pf) 10 0 v ds , drain-source voltage (volts) figure 8. capacitance versus drain?source voltage 0 nf, noise figure (db) 10 r s , source resistance (k ohms) figure 9. noise figure versus source resistance 0 figure 10. equivalent low frequency circuit 20 30 50 70 100 200 300 500 700 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 20 30 40 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1.0 10 100 1000 10,000 note: 1. graphical data is presented for dc conditions. tabular data is given for pulsed conditions (pulse width = 630 ms, duty cycle = 10%). *c osp is c oss in parallel with series combination of c iss and c rss . v i c rss c iss r oss c oss | y fs | v i common source y parameters for frequencies below 30 mhz y is = j c iss y os = j c osp * + 1/r oss y fs = y fs | y rs = -j c rss v ds = 15 v f = 1.0 khz i dss = 3.0 ma 6.0 ma 10 ma f = 1.0 mhz v gs = 0 c iss c oss c rss v ds = 15 v v gs = 0 f = 100 hz
2n5460, 2n5461, 2N5462 http://onsemi.com 5 package dimensions style 7: pin 1. source 2. drain 3. gate to?92 case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1
2n5460, 2n5461, 2N5462 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n5460/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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